Temperature-dependent optical band gap of the metastable zinc-blende structure β-GaN
- 15 September 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (12), 8433-8438
- https://doi.org/10.1103/physrevb.50.8433
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and propertiesJournal of Applied Physics, 1993
- First-principles total-energy calculation of gallium nitridePhysical Review B, 1992
- Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) siliconApplied Physics Letters, 1991
- An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Growth of cubic phase gallium nitride by modified molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989
- Growth Of Gallium Nitride On Silicon Carbide By Molecular Beam EpitaxyPublished by SPIE-Intl Soc Optical Eng ,1988
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and HydrazineJapanese Journal of Applied Physics, 1986
- Hot electron microwave conductivity of wide bandgap semiconductorsSolid-State Electronics, 1976
- Band Structure and Reflectivity of GaNPhysica Status Solidi (b), 1974
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969