Evidence for a stretched-exponential description of optical defect generation in hydrogenated amorphous silicon
- 2 July 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (1), 79-80
- https://doi.org/10.1063/1.103584
Abstract
It is shown that a growing number of experimental results, including some that are very recent and detailed, provide a strong support for a stretched-exponential description of optically induced degradation in hydrogenated amorphous silicon. This support consists of the confirmation of predictions of intensity-independent saturation of the density of light-induced defects, as well as several effects involved in the time dependence of degradation. These rate effects include variations with (a) light intensity, (b) temperature during degradation, (c) the range of density variation, and (d) the optical properties of the material.Keywords
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