Epitaxial silicon growth on porous silicon by reduced pressure, low temperature chemical vapour deposition
- 31 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 4 (1-4), 435-439
- https://doi.org/10.1016/0921-5107(89)90283-3
Abstract
No abstract availableKeywords
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