Trapping of D in SiC and damage due to implantation
- 3 December 1990
- journal article
- Published by Elsevier in Journal of Nuclear Materials
- Vol. 176-177, 1010-1017
- https://doi.org/10.1016/0022-3115(90)90183-n
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Tridyn-binary collision simulation of atomic collisions and dynamic composition changes in solidsComputer Physics Communications, 1988
- Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphizationJournal of Materials Research, 1988
- Recrystallization of ion-implanted α-SiCJournal of Materials Research, 1987
- Ion beam modification of 6H/15R SiC crystalsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Epitaxial Growth and Characterization of β ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1985
- Retention of hydrogen implanted into SiC single crystalsJournal of Nuclear Materials, 1984
- Structural alterations in SiC as a result of Cr+ and N+ implantationNuclear Instruments and Methods in Physics Research, 1983
- Temperature dependence of H saturation and isotope exchangeJournal of Nuclear Materials, 1981
- Raman scattering and SEM studies of graphite and silicon carbide surfaces bombarded with energetic protons, deuterons and helium ionsJournal of Nuclear Materials, 1976
- Temperature dependence of trapping and depth profiles of 6 to 15 kev deuterium in carbonJournal of Nuclear Materials, 1976