Time-delay and memory effects in GaAs1-xPxinjection laser
- 1 April 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 4 (4), 161-163
- https://doi.org/10.1109/jqe.1968.1075054
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Temperature behavior of stimulated emission delays in GaAs diodes and a proposed trapping modelIEEE Journal of Quantum Electronics, 1968
- Characteristics of GaAs lasers near room temperatureIEEE Journal of Quantum Electronics, 1968
- Delay of the stimulated emission in GaAs laser diodes near room temperatureSolid-State Electronics, 1967
- Light emission and electrical characteristics of epitaxial GaAs lasers and tunnel diodesSolid State Communications, 1964