Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD
- 1 December 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (12A), L795
- https://doi.org/10.1143/jjap.22.l795
Abstract
Undoped GaAs epitaxial layers were grown by low-pressure MOCVD in a wide range of operating pressure (3×10-3 to 75 Torr). These epitaxial layers had smooth surfaces. Conductivity of the epitaxial layers grown under the same [AsH3]/[TMG] ratio (=75) changed from n-type to p-type at about 5×10-1 Torr as operating pressure was reduced. Low temperature photoluminescence spectra indicate that carbon is the dominant acceptor and its concentration increases as operating pressure is reduced.Keywords
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