Photovoltaic properties of CdTe p-n junctions produced by ion implantation
- 1 January 1978
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (1), 322-326
- https://doi.org/10.1063/1.324389
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The Defect Structure of Phosphorus‐Doped CdTeJournal of the Electrochemical Society, 1977
- Photovoltaic determination of optical-absorption coefficient in CdTeJournal of Applied Physics, 1977
- Properties of CdTep-nDiodes Prepared by Al Vapor-DiffusionJapanese Journal of Applied Physics, 1975
- TYPE CONVERSION AND p-n JUNCTIONS IN n-CdTe PRODUCED BY ION IMPLANTATIONApplied Physics Letters, 1968
- Injection Mechanism and Recombination Kinetics in Electroluminescent CdTe DiodesJournal of Applied Physics, 1966
- I. IntroductionPublished by Elsevier ,1960