In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction
- 31 October 2007
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 84 (9-10), 2142-2145
- https://doi.org/10.1016/j.mee.2007.04.056
Abstract
No abstract availableKeywords
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