Roughness of the silicon (001)/SiO2 interface
- 14 June 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (24), 3144-3146
- https://doi.org/10.1063/1.109109
Abstract
We use synchrotron x‐ray diffraction to characterize the roughness of the buried Si(001)/SiO2 interface, for three types of oxide, without modification of the interface. We show that the thermal oxide interface is 0.5±0.1 times as rough as the native oxide interface, suggesting that the oxide growth decreases the roughness slightly. We also measure the roughness of a chemically grown oxide interface.Keywords
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