X-ray scattering studies of the Si-interface
- 15 February 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 60 (7), 600-603
- https://doi.org/10.1103/physrevlett.60.600
Abstract
We report observation of microcrystalline interface phases at the -Si(001) interface. The crystallites have varying degrees of orientational order with respect to the substrate depending on preparation techniques. Most of the diffraction peaks from these phases can be indexed as due to the α-cristobalite structure. Data are presented for oxides prepared on Si(001) surfaces by thermal oxidation, by electron beam evaporation, and by native oxide formation.
Keywords
This publication has 5 references indexed in Scilit:
- The thermal oxidation of silicon the special case of the growth of very thin filmsAdvances in Physics, 1986
- Submicrocrystallites and the Orientational Proximity EffectPhysical Review Letters, 1985
- X-Ray Diffraction Studies: Melting of Pb Monolayers on Cu(110) SurfacesPhysical Review Letters, 1982
- X-Ray Diffraction Study of the Ge(001) Reconstructed SurfacePhysical Review Letters, 1981
- On the Kinetics of the Thermal Oxidation of Silicon: III . Coupling with Other Key PhenomenaJournal of the Electrochemical Society, 1981