The influence of growth conditions on sulfur incorporation in GaAs grown by molecular beam epitaxy
- 1 August 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (8), 4421-4425
- https://doi.org/10.1063/1.332636
Abstract
An electrochemical sulfur cell has been used as a source of donors for molecular beam epitaxy grown GaAs. The galvanic cell is Pt/Ag/AgI/Ag2 S/Pt. The electrical and optical properties of the films grown in the substrate temperature range 550–590 °C are good. However, at substrate temperatures above 600 °C the incorporation rate of sulfur is much reduced. The reduction in the incorporation rate is explained on the basis of the competing reactions (1) the incorporation of sulfur into the GaAs matrix and (2) the formation of volatile Ga2S. A detailed discussion of the incorporation at elevated substrate temperatures and with varying As4/Ga ratio is presented. It is also demonstrated that if the substrate temperature is reproducibly known then the electrochemical cell can be used to introduce intricate doping profiles into epitaxial GaAs. A hyperabrupt varactor diode has been fabricated as an example.Keywords
This publication has 17 references indexed in Scilit:
- Sn and Te doping of molecular beam epitaxial GaAs using a SnTe sourceJournal of Applied Physics, 1982
- The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAsApplied Physics Letters, 1981
- An investigation into silicon doping of MBE (100) GaAsJournal of Physics D: Applied Physics, 1981
- Germanium doping of gallium arsenide grown by molecular beam epitaxy — Some thermodynamic aspectsJournal of Crystal Growth, 1980
- The Interplay of Thermodynamics and Kinetics in Molecular Beam Epitaxy (MBE) of Doped Gallium ArsenideJournal of the Electrochemical Society, 1980
- The use of SnTe as the source of donor impurities in GaAs grown by molecular beam epitaxyApplied Physics Letters, 1979
- Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxyApplied Physics A, 1979
- ’’Surface exchange’’ doping of MBE GaAs from S and Se ’’captive sources’’Applied Physics Letters, 1978
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975