An investigation into silicon doping of MBE (100) GaAs
- 14 October 1981
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 14 (10), 1853-1865
- https://doi.org/10.1088/0022-3727/14/10/018
Abstract
A study of the silicon doping of MBE (molecular beam epitaxy) (100) GaAs is presented. The effects of the various growth parameters on the electrical properties of the layers have been investigated. In particular the influence of the As4:Ga flux ratio on the Si incorporation is considered. A model based on the site occupancy of the Si dopant and an As-induced defect Si-impurity complex is invoked to account for the observed electrical properties.Keywords
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