Infrared reflectivity and transmissivity of boron-implanted, laser-annealed silicon

Abstract

Analysis of the infrared reflectance and transmittance of boron‐implanted, laser‐annealed silicon shows that the Drude theory of free hole scattering provides a good description of the optical properties of these materials up to the highest doping levels obtainable. It was found that (1) the relaxation time (∼7×10⁻¹⁵ s) was independent of the implant dose, and (2) the boron concentration affecting the optical properties varies essentially linearly with implant dose.