Deposition of Aluminum Nitride by Remote Plasma-Enhanced Chemical Vapor Deposition Using Triisobutyle Aluminum
- 1 April 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (4A), L423-425
- https://doi.org/10.1143/jjap.31.l423
Abstract
Aluminum nitride thin-film deposition resulting from addition of triisobutyle aluminum (TIBA) to the afterglow of an N2 microwave plasma has been investigated. Chemiluminescence spectra of the downstream reaction indicated that the substrate temperature is one parameter for the decomposition of TIBA. The activation energy for plasma-assisted TIBA decomposition is also evaluated by the chemiluminescence spectra and found to be about 14.8 kJ/mol.Keywords
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