Electron microscope observations of precipitation in boron implanted silicon

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1 January 1975

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 25 (4), 275-277
https://doi.org/10.1080/00337577508235401

Abstract

No abstract available

Keywords

This publication has 6 references indexed in Scilit:

On the annealing of damage produced by boron ion implantation of silicon single crystals
Radiation Effects, 1971
CHANNELING STUDY OF BORON-IMPLANTED SILICON
Applied Physics Letters, 1970
Correlation of electron microscope studies with the electrical properties of boron implanted silicon
Radiation Effects, 1970
Damage produced by ion mplantation in silicon
Radiation Effects, 1970
Observation of ion bombardment damage in silicon
Philosophical Magazine, 1968
Method of preparing Si and Ge specimens for examination by transmission electron microscopy
British Journal of Applied Physics, 1962

Cited by 5 articles