Measurement of current gains of high and low power thyristors and their dependence upon current, temperature and gold-doping

Abstract

Small-signal low-frequency current gains of the npn and pnp transistor sections of high and low power thyristors were measured by a three-terminal technique. From their dependence upon current and temperature it was found that the saturation current dependence of the isolated centre junction primarily determines temperature stability. Current gain measured at a series of temperatures, and plotted para-metrically with anode current, qualitatively correctly predicts the temperature dependence of the two-terminal latching currents. Gold-doping predictably leads to a low current gain for the pnp section.