Effects of ion irradiation on thermally formed silicides in the presence of interfacial oxide
- 1 February 1986
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 136 (1), 69-76
- https://doi.org/10.1016/0040-6090(86)90109-4
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- An inert marker study for palladium silicide formation: Si moves in polycrystalline Pd2SiJournal of Applied Physics, 1985
- Impurity effects in transition metal silicidesJournal of Vacuum Science & Technology B, 1984
- Comparison of the nuclear reactions 18O(p, α)15N and 16O(d, α)14N to study the oxygen effects in Pt silicide formationNuclear Instruments and Methods in Physics Research, 1983
- The effects of implanted oxygen on Pd2Si formationNuclear Instruments and Methods in Physics Research, 1983
- A Self-Aligned Mo-Silicide FormationJapanese Journal of Applied Physics, 1983
- Simultaneous formation of a shallow silicon p-n junction and a shallow silicide/silicon ohmic contact by an ion implantation techniqueApplied Physics Letters, 1982
- Improvement of thermally formed nickel silicide by ion irradiationJournal of Vacuum Science and Technology, 1982
- Transmission electron microscopy investigation of silicide formation on slightly oxidized silicon substratesJournal of Applied Physics, 1981
- Calculation of projected ranges — analytical solutions and a simple general algorithmNuclear Instruments and Methods, 1981