Near infrared dark-field microscopy with video for studying defects in III-V compound materials
- 1 February 1990
- journal article
- Published by IOP Publishing in Measurement Science and Technology
- Vol. 1 (2), 120-125
- https://doi.org/10.1088/0957-0233/1/2/003
Abstract
A system is described using near infrared dark-field microscopy (DFM) for the analysis of defects in III-V compound materials. The microscope uses a halogen bulb light source and a silicon vidicon camera detector. High-contrast images of defects are shown as bright detail on a dark background. For the same view, DFM gives image detail contrast as high as 100%, compared with 25% in bright-field illumination. Digital image processing is used for improving the presentation of results. Individual point scatterers of 0.5-3 mu m in size, interpreted as being due to microprecipitates decorating dislocations, are shown in various substrates of GaAs.Keywords
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