Dislocation lines in indium-doped GaAs crystals observed by infrared light scattering tomography of about 1 μm wavelength radiation
- 1 May 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 88 (3), 332-340
- https://doi.org/10.1016/0022-0248(88)90005-x
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
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