Liquid-phase-epitaxial InAsySb1−y on GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid-IR photodiodes
- 15 April 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (8), 2898-2903
- https://doi.org/10.1063/1.337834
Abstract
The growth of device quality InAsySb1−y on (100)‐oriented GaSb substrates has been achieved by the use of intermediate buffer layers of Ga0.82In0.18As0.17Sb0.83 to minimize the dissolution of the subtrate by the ternary solution. Characterization of these layers by x‐ray diffraction, compositional analysis, low‐temperature photoluminescence, and electrical measurements indicates their high quality. Spectral response measurements of InAsSb/GaInAsSb/GaSb back‐illuminated photodiodes give a 6%–7% quantum efficiency between wavelengths of 2.5 and 4.2 μm at room temperature.Keywords
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