Direct control and characterization of a Schottky barrier by scanning tunneling microscopy
- 25 January 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (4), 278-280
- https://doi.org/10.1063/1.99493
Abstract
Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.Keywords
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