Phonon-Limited Electron Mobility in Si(100) Inversion Layer at Low Temperatures
- 1 January 1981
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 50 (1), 114-120
- https://doi.org/10.1143/jpsj.50.114
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Lattice scattering mobility of n-inversion layers in si(100) at low temperaturesSurface Science, 1980
- Electron-phonon interactions in n-type silicon inversion layers at low temperaturesSurface Science, 1980
- Many-body effects and the electron mobility in Si inversion layers at room temperatureSurface Science, 1980
- Temperature dependence of scattering in the inversion layerSurface Science, 1980
- Many-body effects in the subband structure of Si-MOS inversion layerSurface Science, 1978
- Inversion layer mobility with intersubband scatteringSurface Science, 1976
- Surfons and the Electron Mobility in Silicon Inversion LayersJapanese Journal of Applied Physics, 1974
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Phonons in a half spaceAnnals of Physics, 1971
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967