Gate breakdown in MESFETs and HEMTs
- 1 October 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (10), 524-526
- https://doi.org/10.1109/55.119177
Abstract
A new model for gate breakdown in MESFETs and HEMTs is presented. The model is based upon a combination of thermally assisted tunneling and avalanche breakdown. When thermal effects are considered it is demonstrated that the model predicts increasing drain-source breakdown as the gate electrode is biased towards pinch-off, in agreement with experimental data. The model also predicts the gate current versus bias behavior observed in experimental data. The model is consistent with various reports of breakdown and light emission phenomena reported in the literature.Keywords
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