Zn1−xMgxSe Samples and a ZnSe/Zn0.93Mg0.07Se Quantum Well under Pressure: Optical Absorption and Photoluminescence
- 1 November 1996
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 198 (1), 355-361
- https://doi.org/10.1002/pssb.2221980147
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Preparation and Novel Coordination Structure of [Cu(sacch)2(H2O)2] · 4 H2OCrystal Research and Technology, 1996
- Absorption of Thin ZnSe, ZnS and ZnSxSe1-xFilms under High Hydrostatic PressureActa Physica Polonica A, 1995
- The pressure dependence of the intraimpurity absorption and the charge transfer process of ZnS:Ni and ZnSe:NiJournal of Physics: Condensed Matter, 1995
- Simple analytical method for calculating exciton binding energies in semiconductor quantum wellsPhysical Review B, 1992
- Pressure tuning of strains in semiconductor heterostructures: (ZnSe epilayer)/(GaAs epilayer)Physical Review B, 1991
- Effect of pressure on the low-temperature exciton absorption in GaAsPhysical Review B, 1990
- Pressure dependence of the lowest direct absorption edge of ZnSeSolid State Communications, 1985
- Investigation of band masses andgvalues of ZnSe by two-photon magnetoabsorptionPhysical Review B, 1985
- Pressure Dependence of the Second-Order Elastic Constants of ZnTe and ZnSeJournal of Applied Physics, 1970
- Theory of Line-Shapes of the Exciton Absorption BandsProgress of Theoretical Physics, 1958