30 nm Line Fabrication on PMMA Resist by Fine Focused Be Ion Beam
- 1 April 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (4A), L232-233
- https://doi.org/10.1143/jjap.23.l232
Abstract
A 30 nm line pattern with 0.4 µm depth was successfully fabricated on a PMMA resist by a 100 kV focused Be++ beam emitted from Au–Si–Be ternary alloy ion source. The line width fabricated decreased with the decrease in ion dose.Keywords
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