Determination of diffusion length and surface recombination velocity by light excitation
- 31 July 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (7), 965-968
- https://doi.org/10.1016/0038-1101(78)90295-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Effect of heterostructure on the hole diffusion length of epitaxial GaAsPhysica Status Solidi (a), 1973
- Laser Beams and ResonatorsApplied Optics, 1966
- Injected Current Carrier Transport in a Semi-Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination VelocitiesJournal of Applied Physics, 1955