High-power diode-laser-pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm
- 10 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (2), 152-154
- https://doi.org/10.1063/1.111548
Abstract
Diode-array-pumped GaInAsSb/GaSb and InAsSb/GaSb double heterostructure lasers operated at 85 K yielded 95 mW average and 1.5 W peak power per facet at 3 μm, and 50 mW average and 0.8 W peak power facet at 4 μm. The highest operational temperature was 210 K for the 3-μm quaternary and 150 K for the 4-μm ternary.Keywords
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