Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb
- 3 February 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (5), 315-317
- https://doi.org/10.1063/1.96537
Abstract
Double heterostructures consisting of InAs0.91 Sb0.09 active layers with Al0.5 Ga0.5Sb cladding layers were grown by molecular beam epitaxy on GaSb substrates. Optically pumped laser emission at 3.9 μm was observed from 80 to 135 K with an exponentially dependent threshold with T0=17 K. At 80 K the threshold corresponds to an effective current of 4 kA/cm2. This value represents a significant reduction when compared with previous results. For a 1‐μm‐thick active layer the full angular width of the far field at the half intensity point normal to the junction is 40° and is in reasonable agreement with the width calculated from the guide and cladding refractive indices.Keywords
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