The role of the interfacial layer in polysilicon emitter bipolar transistors
- 1 December 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (12), 1862-1869
- https://doi.org/10.1109/t-ed.1982.21043
Abstract
This paper presents a unified theory for current transport in the monocrystalline emitter, thin oxide layer, and polycrystalline region of a bipolar transistor with a polysilicon emitter. The transport and tunneling equations are arranged in such a way that fast numerical solutions are readily obtained. A clear qualitative description is presented of the processes involved in gain determination and quantitative results are given for typical structures with various interfacial oxide layer thickness as a function of bias conditions.Keywords
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