Effect of Cr Concentration on Electrical Properties of Cr-Doped Semi-Insulating GaAs Substrates
- 1 August 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (8), L579
- https://doi.org/10.1143/jjap.20.l579
Abstract
The chromium concentration in semi-insulating GaAs substrates and its distribution along Cr-doped ingots have been measured by flameless atomic absorption spectrophotometry. When the Cr concentration is lower than a certain value, the Cr distribution can be approximated by the normal freeze equation. Whereas at higher Cr concentrations, the measured distribution deviates from the equation probably due to Cr precipitation. The Cr concentration is found to be closely correlated with leakage currents in the substrates and with activation efficiencies of 28Si ions implanted directly into the substrate.Keywords
This publication has 5 references indexed in Scilit:
- Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulantApplied Physics Letters, 1979
- Measurement of the chromium concentration in semi-insulating GaAs using optical absorptionJournal of Applied Physics, 1979
- ESR assessment of 3d7 transition metal impurity states in GaP, GaAs and InPSolid State Communications, 1978
- Ion-implanted microwave field-effect transistors in GaAsSolid-State Electronics, 1975
- The Preparation of Semi-Insulating Gallium Arsenide by Chromium DopingJournal of the Electrochemical Society, 1964