Angle-resolved ultraviolet photoemission study of Si(111) 7 × 7 and 1 × 1 surfaces
- 30 September 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 39 (9), 1001-1004
- https://doi.org/10.1016/0038-1098(81)90075-2
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Buckling Reconstruction on Laser-Annealed Si(111) SurfacesPhysical Review Letters, 1981
- Temperature-dependent angle-resolved x-ray photoemission study of the valence bands of single-crystal tungsten: Evidence for direct transitions and phonon effectsPhysical Review B, 1980
- Angle-resolved photoemission of the Si(111) 7 × 7 surfaceSurface Science, 1980
- Electronic structure of Si(111) surfacesSurface Science, 1980
- Similarity between the Si(111)-(7×7) and impurity-stabilized Si(111)-(1×1) surfacesSolid State Communications, 1980
- An Investigation of the Si(111) 7×7 Surface Structure by RHEEDJapanese Journal of Applied Physics, 1980
- Atomic and Electronic Structure of the 7 × 7 Reconstructed Si (111) SurfacePhysical Review Letters, 1980
- Electronic structure of the Si(111) 7×7 surface studied by angle-resolved photoelectron spectroscopyJournal of Vacuum Science and Technology, 1979
- Temperature dependence of bulk and surface energy bands in copper using angle-resolved photoemissionPhysical Review B, 1979
- Maximum Superconducting Transition Temperatures inCompounds?Physical Review Letters, 1978