Analysis of Kink Characteristics in Silicon-on-Insulator MOSFET's Using Two-Carrier Modeling
- 1 February 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 20 (1), 378-382
- https://doi.org/10.1109/jssc.1985.1052317
Abstract
An exact SOI device simulator applicable to prediction of the transistor characteristics in high-current region is developed. In the simulator, the basic two-dimensional Poisson's and current continuity equations are numerically solved under steady-state condition. To obtain a stable and rapid convergence in the numerical scheme, a newly developed alternative step solving method is implemented. Using this simulator, the drain current kink effect, a typical phenomenon for substrate-floating devices, is exactly simulated for the first time. The physical mechanism of this phenomenon is also clarified. The simulated results indicate that kink effects are suppressed by using Iow-lifetime SOI substrates.Keywords
This publication has 8 references indexed in Scilit:
- A two-dimensional analysis for MOSFET's fabricated on buried SiO2layerIEEE Transactions on Electron Devices, 1980
- Two-dimensional modelling of s.o.s. transistorsIEE Journal on Solidstate and Electron Devices, 1978
- Accurate calculations of the forward drop and power dissipation in thyristorsIEEE Transactions on Electron Devices, 1978
- Characterization of silicon-on-sapphire IGFET transistorsIEEE Transactions on Electron Devices, 1977
- Two-dimensional carrier flow in a transistor structure under nonisothermal conditionsIEEE Transactions on Electron Devices, 1976
- Influence of the floating substrate potential on the characteristics of ESFI MOS transistorsSolid-State Electronics, 1975
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952