Site Symmetry and Ground-State Characteristics for the Oxygen Donor in Silicon
- 17 June 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 54 (24), 2639-2642
- https://doi.org/10.1103/physrevlett.54.2639
Abstract
We have investigated the effect of stress upon the Rydberg series of infrared absorption bands due to oxygen donors in silicon. Our results establish that the donor has an effective-mass-like ground state that is constructed from conduction-band valleys selected by the distortions associated with an extended "central cell."
Keywords
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