EPR spectra of heat-treatment centers in oxygen-rich silicon
- 1 March 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 25 (12), 987-990
- https://doi.org/10.1016/0038-1098(78)90889-x
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- EPR of a carbon-oxygen-divacancy complex in irradiated siliconPhysica Status Solidi (a), 1977
- Electron irradiation damage in silicon containing carbon and diffused 18OSolid State Communications, 1974
- Hyperfine Structure of the Neutral () Vacancy-Oxygen Center in Ion-Implanted SiliconPhysical Review B, 1972
- The effect of carbon on thermal donor formation in heat treated pulled silicon crystalsJournal of Physics and Chemistry of Solids, 1972
- Electron Paramagnetic Resonance of the Neutral () One- Vacancy-Oxygen Center in Irradiated SiliconPhysical Review B, 1971
- Reactions of group iii acceptors with oxygen in silicon crystalsJournal of Physics and Chemistry of Solids, 1960
- Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance TechniquePhysical Review B, 1959
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956