Atomic force microscopy investigation of argon‐bombarded InP: Effect of ion dose density
- 1 July 1995
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 23 (7-8), 433-439
- https://doi.org/10.1002/sia.740230702
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Surface compositional changes of InP due to krypton ion bombardmentSurface and Interface Analysis, 1994
- Sputtering of compound semiconductor surfaces. I. Ion-solid interactions and sputtering yieldsCritical Reviews in Solid State and Materials Sciences, 1994
- Ion angle dependence in the preferential sputtering of InPApplied Surface Science, 1993
- Surface roughness development during sputtering of GaAs and InP: Evidence for the role of surface diffusion in ripple formation and sputter cone developmentJournal of Vacuum Science & Technology A, 1992
- Preferential sputtering of InP: an AES investigationSurface Science, 1991
- AES, EELS and XPS study of ion‐induced GaAs and InP(110) surface and subsurface modificationsSurface and Interface Analysis, 1990
- Cone formation as a result of whisker growth on ion bombarded metal surfacesJournal of Vacuum Science & Technology A, 1985
- Ion‐Beam Etching of InP and Its Application to the Fabrication of High Radiance InGaAsP / InP Light Emitting DiodesJournal of the Electrochemical Society, 1984
- Depth resolution factor of a static gaussian ion beamSurface and Interface Analysis, 1981
- The platinum/carbon replica: High resolution and the intrusion or artefactsSurface Technology, 1976