Preferential sputtering of InP: an AES investigation
- 2 September 1991
- journal article
- Published by Elsevier in Surface Science
- Vol. 255 (3), 309-320
- https://doi.org/10.1016/0039-6028(91)90688-o
Abstract
No abstract availableKeywords
This publication has 43 references indexed in Scilit:
- Fermi-level pinning and growth characteristics of Au on InP()Applied Surface Science, 1986
- An AES, SAM and RHEED study of InP(110) subjected to ion bombardment and annealing treatmentsVacuum, 1983
- Surface studies of InP by electron energy loss spectroscopy and Auger electron spectroscopyApplications of Surface Science, 1982
- Low energy Ar ion bombardment damage of Si, GaAs, and InP surfacesSolid State Communications, 1982
- An investigation by electron spectroscopy for chemical analysis of chemical treatments of the (100) surface of n-type InP epitaxial layers for Langmuir film depositionThin Solid Films, 1980
- Comparison of leed and auger data from cleaved and sputtered-annealed InP(110) surfacesSurface Science, 1980
- Quantitativity in III–V compounds by low-energy ion scattering spectrometry (ISS)Surface Science, 1980
- New method of preparing (100) InP surfaces for schottky barrier and ohmic contact formationJournal of Electronic Materials, 1980
- SIMS evaluation of contamination on ion-cleaned (100) InP substratesApplied Physics Letters, 1977
- The effect of temperature on the surface structure and stoichiometry of (100) InP surfacesThin Solid Films, 1975