Electron Scattering by Neutralized Acceptors in Germanium. II. Zinc
- 1 August 1968
- journal article
- research article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 25 (2), 436-442
- https://doi.org/10.1143/jpsj.25.436
Abstract
Electron scattering by neutralized zinc acceptors in germanium has been studied between 1.5 and 4.2°K through the cyclotron resonance technique under the application of uniaxial compressional stress. Without stress, it is found, the carrier lifetime in zinc-doped germanium becomes so short that the cyclotron resonance linewidth appreciably suffers from the lifetime broadening. Application of uniaxial stress, however, drastically increases the electron lifetime, and analyses of the electron resonance signals with and without stress show that zinc, the dopant itself, is responsible for such a short lifetime. The scattering relaxation time of electrons by neutral zinc impurities is thus derived only under a high stress limit applied in order to avoid mixing of the lifetime broadening. The derived value agrees in a rather surprising manner with the theoretical one based on the positron-helium atom scattering model after Kestner et al.Keywords
This publication has 17 references indexed in Scilit:
- Cyclotron Resonance of Plastically Deformed GermaniumJournal of the Physics Society Japan, 1967
- Helium‐Like Impurities in SemiconductorsPhysica Status Solidi (b), 1967
- Electron Scattering by Thermal Acceptors in GermaniumJournal of the Physics Society Japan, 1966
- Electron Scattering by Neutralized Acceptors in Germanium I.Gallium and IndiumJournal of the Physics Society Japan, 1966
- Line-Broadening of Cyclotron Resonance due to Lattice and Neutral Impurity Scattering in Silicon and GermaniumJournal of the Physics Society Japan, 1964
- Effect of an Electric Field on Positronium Formation in Gases: ExperimentalPhysical Review B, 1956
- Effect of an Electric Field on Positronium Formation in Gases: TheoreticalPhysical Review B, 1956
- Scattering of Carriers from Doubly Charged Impurity Sites in GermaniumPhysical Review B, 1956
- Properties of Zinc-, Copper-, and Platinum-Doped GermaniumPhysical Review B, 1954
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950