In-situ determination of potential profiles in a-Si: H
- 1 August 1986
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 54 (2), L57-L62
- https://doi.org/10.1080/13642818608239003
Abstract
An in-situ Kelvin probe has been used to measure accurately and conveniently built-in potential profiles of junctions made by depositing undoped and/or doped a-Si: H layers on a conducting substrate. The method is specifically described for a Schottky barrier. The density of states in the vicinity of the interface is obtained from the data and the density of surface states is determined to be approximately 1·7 × 1011 cm−2.Keywords
This publication has 17 references indexed in Scilit:
- In situ measurements of the Fermi level position in undoped and doped a-Si:H filmsJournal of Non-Crystalline Solids, 1985
- Density-of-states distribution in the mobility gap of a-Si:HJournal of Non-Crystalline Solids, 1985
- Majority and minority carrier lifetimes in doped a-Si junctions and the energy of the dangling-bond statePhilosophical Magazine Part B, 1984
- Space-charge-limited conduction for the determination of the midgap density of states in amorphous silicon: Theory and experimentPhysical Review B, 1984
- Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasmaApplied Physics Letters, 1983
- Optical absorption spectra of surface or interface states in hydrogenated amorphous siliconApplied Physics Letters, 1983
- The relation between contact potential and planar conduction as a-Si : H films undergo gas adsorption or temperature changesJournal de Physique, 1983
- Analysis of field-effect-conductance measurements on amorphous semiconductorsPhilosophical Magazine Part B, 1981
- Silane dissociation mechanisms and thin film formation in a low pressure multipole dc dischargeApplied Physics Letters, 1980
- An investigation of the amorphous-silicon barrier and p-n junctionPhilosophical Magazine Part B, 1978