Studies by cross-sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates
- 15 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (6), 538-540
- https://doi.org/10.1063/1.91977
Abstract
We have used the cross‐sectional transmission electron microscope to study InAs grown by molecular beam epitaxy. For the InAs films directly grown on GaAs, the dislocation density at the InAs‐GaAs interface is several orders of magnitude higher than that in the bulk films. Those grown by the step grading technique show strong interactions among dislocations at the interfaces, and a much reduced dislocation density in the thin InAs layers.Keywords
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