Low-resistance, long-life contacts by laser-annealing of silver-implanted p-type PbTe
- 31 July 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (7), 675-680
- https://doi.org/10.1016/0038-1101(81)90198-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Luminescence of isoelectronic traps in laser-annealed, tellurium-coated zinc sulphideSolid State Communications, 1981
- Contact Reliability Studies on Lead‐Salt Diode LasersJournal of the Electrochemical Society, 1980
- Laser annealing of ion implanted semiconductórsJournal of Crystal Growth, 1980
- Asymmetrical Profiles of Ion Implanted Phosphorus in SiliconJapanese Journal of Applied Physics, 1979
- Ion-implantation-induced lattice defects in PbTeApplied Physics Letters, 1977
- Effect of Pb- and Te-saturation on carrier concentrations in impurity-doped PbTeJournal of Electronic Materials, 1973
- LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PbTe AND Pb0.8Sn0.2TeApplied Physics Letters, 1970
- An Electrolytic Polish and Etch for Lead TellurideJournal of the Electrochemical Society, 1962