Gain characteristics of InGaN/GaN quantum well diode lasers
- 23 March 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (12), 1418-1420
- https://doi.org/10.1063/1.120607
Abstract
We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. While the transparency condition can be reached at a moderate current density, the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom alloy.Keywords
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