Electron beam annealing of selenium-implanted gallium arsenide
- 15 August 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (4), 322-324
- https://doi.org/10.1063/1.92707
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Comparative structural and electrical characterization of scanning-electron- and pulsed-laser-annealed siliconApplied Physics Letters, 1980
- Activation of low dose silicon implants in GaAs by multiply scanned electron beamsElectronics Letters, 1980
- Characterisation of multiple-scan electron beam annealing methodElectronics Letters, 1980