Distributed Feed Back Surface Emitting Laser Diode with Multilayered Heterostructure
- 1 July 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (7A), L512-514
- https://doi.org/10.1143/jjap.23.l512
Abstract
The first distributed feedback surface emitting laser diode is realized with Al0.3Ga0.7As/GaAs multilayered heterostructure. Transverse junction-stripe (TJS) type lateral carrier injection is employed. The threshold current is 120 mA at 150 K with the active layer thickness of 6 µm. The temperature coefficient of the lasing wavelength is equal to a conventional DFB laser diode.Keywords
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