Inert-gas-bubble formation in the implanted metal/Si system
- 1 June 1979
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (6), 3978-3984
- https://doi.org/10.1063/1.326475
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Ion-beam-induced silicide formationApplied Physics Letters, 1979
- Comparative study of annealed neon-, argon-, and krypton-ion implantation damage in siliconJournal of Applied Physics, 1978
- Argon bubble formation in the sputtering of PtSiApplied Physics Letters, 1978
- Visible interference effects in silicon caused by high-current–high-dose implantationApplied Physics Letters, 1976
- Disorder produced by high-dose implantation in SiApplied Physics Letters, 1976
- Transmission electron microscopy of cross sections of large scale integrated circuitsIEEE Transactions on Electron Devices, 1976
- Kinetics and mechanism of platinum silicide formation on siliconApplied Physics Letters, 1974