High-power singlemode AlGaAs distributed Bragg reflector laser diodes operating at 856 nm

17 March 1994

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 30 (6), 496-497
https://doi.org/10.1049/el:19940350

Abstract

Data are presented describing AlGaAs distributed Bragg reflector (DBR) laser diodes operating at 856 nm with single transverse and longitudinal mode behaviour beyond 270 mW CW. The threshold current of these lasers is 35 mA, with a differential quantum efficiency of 58%. Preliminary lifetest data are presented.

Keywords

This publication has 5 references indexed in Scilit:

High power 0.98 μm InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers
Electronics Letters, 1993
Singlemode InGaAs/GaAs distributed Bragg reflector laser diodes operating at 1083 nm
Electronics Letters, 1993
High power singlemode GaInAs lasers with distributed Bragg reflectors
Electronics Letters, 1992
Single-mode InGaAs-GaAs laser diodes operating at 980 nm
Electronics Letters, 1991
High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers
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