TWO-CARRIER RECOMBINATION LIMITED CURRENTS IN Si p-π-n JUNCTIONS
- 15 August 1964
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 5 (4), 74-75
- https://doi.org/10.1063/1.1754061
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- CURRENT-VOLTAGE CHARACTERISTICS OF LARGE DOUBLE INJECTION IN Si p-i-n STRUCTURESApplied Physics Letters, 1964
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961
- Current-Voltage Characteristics of Forward Biased LongStructuresPhysical Review B, 1961
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954