A Large Barrier Height Schottky Contact between Amorphous Si–Ge–B and GaAs
- 1 November 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (11A), L709
- https://doi.org/10.1143/jjap.22.l709
Abstract
Electrical properties of contacts between amorphous Si–Ge–B and GaAs are studied. A Schottky contact with a barrier height as large as 0.99 V has been realized. The barrier height can be varied by changing the composition of the amorphous films. Amorphous Si–Ge–B is applied to GaAs FETs as gate electrodes. A large saturated drain current of 900 µA/10 µm gate width has been realized. This value is 1.88 times as large as conventional normally-off GaAs MESFETs.Keywords
This publication has 5 references indexed in Scilit:
- Amorphous Silicon-Germanium-Boron Alloy Applied to Low-Loss and High-Speed DiodesJapanese Journal of Applied Physics, 1982
- Silicon-Germanium-Boron Ternary Amorphous AlloyJapanese Journal of Applied Physics, 1982
- Self-align implantation for n+-layer technology (SAINT) for high-speed GaAs ICsElectronics Letters, 1982
- Femtojoule high speed planar GaAs E-JFET logicIEEE Transactions on Electron Devices, 1978
- Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InPJournal of Vacuum Science and Technology, 1976