Silicon-Germanium-Boron Ternary Amorphous Alloy
- 1 April 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (4R), 561
- https://doi.org/10.1143/jjap.21.561
Abstract
Highly conductive ternary amorphous films are prepared by thermal decomposition of silane-germane-diborane mixtures in a low-pressure furnace at 500°C. The conductivity of the amorphous silicon-germanium-borom alloy exceeds the previously obtained limit for amorphous silicon, and increases with increasing germanium content. The d.c. conductivity and the Seebeck coefficient are measured at above room temperature. Measurements of the a.c. conductivity, optical absorption and E.S.R. are made at room temperature. The carrier transport is well described by a variable-range-hopping model. Evidences for a band model similar to that for the semimetal are proposed for the ternary amorphous alloy. In a higher germanium content film, the structure transforms into a microcrystalline one. The conductivity of microcrystalline silicon-germanium-boron alloy attains 103 S·cm-1.Keywords
This publication has 22 references indexed in Scilit:
- A New Technique of Boron Doping in Si:H FilmsJapanese Journal of Applied Physics, 1981
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980
- ESR in Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1980
- Defect compensation in doped CVD amorphous siliconJournal of Non-Crystalline Solids, 1980
- Post-hydrogenation of CVD deposited a-Si filmsJournal of Non-Crystalline Solids, 1980
- Thermopower calculation for variable range hopping — application to α‐SiPhysica Status Solidi (b), 1975
- Electrical Properties and Anisotropy in Amorphous Si andAlloyPhysical Review B, 1973
- On the Theory of Hopping Transport in Disordered SemiconductorsPhysica Status Solidi (b), 1973
- dc Conductivity of Amorphous Germanium and the Structure of the PseudogapPhysical Review Letters, 1973
- Hopping Conductivity in Disordered SystemsPhysical Review B, 1971