Effusion of deuterium from deuterated-fluorinated amorphous silicon under illumination
- 19 December 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (25), 2477-2479
- https://doi.org/10.1063/1.100218
Abstract
Temperature-dependent deuterium effusion experiments were performed on deuterated-fluorinated amorphous silicon containing 25% D and 0.5% F. Evolution was made in the dark and under up to AM1 illumination. It was found that illumination enhanced effusion. The effect could be explained by an increased D diffusion, caused by enhanced SiD bond breaking resulting from energy supplied by the decay of photocarriers to midgap states.Keywords
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