STM Study of the Effects of Etching on the Surface of Kish-Graphite
- 1 June 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (6A), L976
- https://doi.org/10.1143/jjap.27.l976
Abstract
We used a scanning tunneling microscope to study how the surface of Kish-Graphite roughens with etching. We present STM images of the etched surfaces for different etch times. The roughness (rms) and the peak-to-valley height were calculated from the digitized STM signals. The roughness vs sputtering time graph shows that the roughness increases with sputtering time up to about a roughness of 1 nm, then does not change with increased etching. The peak-to-valley height is proportional to the roughness with a coefficient of 8.7.Keywords
This publication has 9 references indexed in Scilit:
- Scanning tunneling microscope combined with scanning electron microscopeUltramicroscopy, 1987
- Float polishing of optical materialsApplied Optics, 1987
- Surface morphology of GaAs(110) by scanning tunneling microscopyPhysical Review B, 1985
- Summary Abstract: Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopyJournal of Vacuum Science & Technology B, 1985
- Elastic Emission Machining (2nd Report)Journal of the Japan Society of Precision Engineering, 1985
- Surface Roughness Standards, Obtained with the Scanning Tunneling Microscope Operated at Atmospheric Air PressureMetrologia, 1985
- Scanning tunneling microscopySurface Science, 1983
- Tunneling through a controllable vacuum gapApplied Physics Letters, 1982
- Sputtering Measurements on Controlled Thermonuclear Reactor Materials Using Auger Electron SpectroscopyNuclear Technology, 1976